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Scaled Construction Project of VDMOS Power Transistor Encapsulation

 
 

I. Project Name
Scaled Construction Project of VDMOS Power Transistor Encapsulation

II. Project Implementation Agency
Xi¡¯an Weiguang Technology Co., Ltd.
The company is a leading professionalized high power semiconductor parts enterprise. Its products feature in strong burning resistance, low change of hFE temperature and long intermittent working life. It has ranked the top in its kind in China and is widely used in various industry fields. Meanwhile, it carries on the supported task of secondary planet, spaceship etc. It has a fixed asset of 320 million Yuan and the annual production value is 83 million Yuan. The high power semiconductor parts including bipolar transistor, bidirectional thyristor, glass encapsulation diode, Silicon Rectifier Bridge, high voltage silicon pile, MOS transistor and IGBT and other high power semiconductor parts.¡¡

III. Project Description
1. Construction target: It is planned to expand the VDMOS power transistor/IGBT chip encapsulation production line, which the encapsulating capacity can reach 100 million pieces, build it one of leading manufacturer of MOS power transistor/IGBT, mee the requirement of key project construction and national economy development. 2. Construction content: it is planned to build a workshop of 1080 m2 with water, vacuum equipment and other supported facilities, newly add encapsulation equipment of back part and instruments. 3. Main technical flow: scribing¡ú sticking ¡ú bonding ¡úencapsulation ¡ú curing ¡ú labeling ¡ú flush remove ¡ú plating ¡ú falker and scribing ¡ú testing ¡úencapsulation.

IV. Total Investment and Cooperation Form
Total investment is 70 million Yuan. The manner of equity participation can be adopted to cooperate with the plant.

V. Anticipation of Market and Analysis of Investment Return
At present, the home demand is 5 billion pieces. The annual average growth rate of the market is 15%. After the project is completed and put into operation, the production capacity of 100 million pieces of VDMOS power transistor/IGBT will be formed. The sales income of 150 million Yuan can be realized. The investment recovery period is 4.3 years. Annual total profit is 24 million Yuan.

Contact Person: Wu Jianchao
Telephone: 029-88222778¡¡13709116255
Fax: 029-88219593
Address: Mailbox 61, Xi¡¯an City, Shaanxi Province
Post Code: 710075
E-mail: jishubu877@126.com


2008-1-29 11:28:05 degree: